宽Bandgap功率半导体器件的特性

English | PDF | 2018 | 349 Pages | ISBN : 1785614916 | 78.89 MB

At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established siliconbased devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection. Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. After an introduction, the book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.

现代功率电子转换器的核心是电力半导体开关器件。宽禁带（WBG）半导体器件，包括硅 carbide 和氮化镓的出现，为使用基于硅的器件的功率电子转换器带来了更高的效率、更小的尺寸、更轻的重量和更低的成本。然而，WBG设备对转换器设计提出了新的挑战，并且需要进行更细致的研究，特别是由于其高速开关速度和更严格保护的需求。《宽禁带电力半导体器件特性研究》一书全面介绍了用于表征这一重要类别的功率器件的方法及其示例。在介绍之后，本书涵盖了脉冲静态测试；结电容测试；动态特性基础；动态特性的栅驱动设计；布线设计与寄生效应管理；双脉冲测试的保护设计；动态特性的测量和数据处理；串扰考虑；三相系统的影响；以及拓扑考虑。

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